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PMEG2010AEJ датащит (Datasheet) 3 Page - NXP Semiconductors

№ деталь PMEG2010AEJ
подробность  20 V, 1 A very low VF MEGA Schottky barrier rectifier in SOD323F package
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
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PMEG2010AEJ_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 January 2010
3 of 9
NXP Semiconductors
PMEG2010AEJ
20 V, 1 A very low VF MEGA Schottky barrier rectifier
6.
Thermal characteristics
[1]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating are available on request.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4]
Solder point of cathode tab.
7.
Characteristics
[1]
Pulse test: tp ≤ 300 μs; δ≤ 0.02.
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1][2] -
-
350
K/W
[1][3] -
-
150
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[4] --55
K/W
Table 7.
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
[1]
IF = 10 mA
-
240
270
mV
IF = 100 mA
-
300
350
mV
IF = 500 mA
-
400
460
mV
IF = 1000 mA
-
480
550
mV
IR
reverse current
VR =5V
-
5
10
μA
VR =8V
-
7
20
μA
VR =10V
-
8
30
μA
VR =15V
-
10
50
μA
VR =20V
-
15
70
μA
Cd
diode capacitance
VR = 1 V; f = 1 MHz
-
4050pF




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