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TPC6113 датащи(PDF) 1 Page - Toshiba Semiconductor

номер детали TPC6113
подробное описание детали  Lithium Ion Battery Applications Power Management Switch Applications
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6113 датащи(HTML) 1 Page - Toshiba Semiconductor

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TPC6113
2009-12-26
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC6113
Lithium Ion Battery Applications
Power Management Switch Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 38 mΩ (typ.)
( VGS = −4.5V)
• Low leakage current: IDSS = −10 μA (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −0.2 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−20
V
Gate-source voltage
VGSS
±12
V
DC
(Note 1)
ID
−5
Drain current
Pulse
(Note 1)
IDP
−20
A
Drain power dissipation
(t
= 5 s)
(Note 2a)
PD
2.2
W
Drain power dissipation
(t
= 5 s)
(Note 2b)
PD
0.7
W
Single pulse avalanche energy (Note 3)
EAS
1.6
mJ
Avalanche current
IAR
−2.5
A
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient (t
= 5 s)
(Note 2a)
Rth (ch-a)
56.8
°C/W
Thermal resistance, channel to ambient (t
= 5 s)
(Note 2b)
Rth (ch-a)
178.5
°C/W
Note: (Note 1), (Note 2), (Note 3) : See other pages.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
6
4
1
2
3
5


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