TPCP8006 datasheet(3/7 Pages) TOSHIBA

номер детали	TPCP8006

подробное описание детали	Notebook PC Applications Portable Equipment Applications

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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TPCP8006

2009-12-08

3

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±12 V, VDS = 0 V

⎯

±100

nA

Drain cut-off current

IDSS

VDS = 20 V, VGS = 0 V

⎯

10

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

20

⎯

Drain-source breakdown

voltage

V (BR) DSX

ID = 10 mA, VGS = −12 V

8

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

0.5

⎯

1.2

V

VGS = 2.5 V, ID = 4.5 A

⎯

9.5

13.7

Drain-source ON-resistance

RDS (ON)

VGS = 4.5 V, ID = 4.5 A

⎯

6.5

10

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 4.5 A

18

36

⎯

S

Input capacitance

Ciss

⎯

1480

⎯

Reverse transfer capacitance

Crss

⎯

330

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

470

⎯

pF

Rise time

tr

⎯

8

⎯

Turn-on time

ton

⎯

16

⎯

Fall time

tf

⎯

19

⎯

Switching time

Turn-off time

toff

Duty

≤ 1%, tw = 10 μs

⎯

53

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

22

⎯

Gate-source charge 1

Qgs1

⎯

4

⎯

Gate-drain (“Miller”) charge

Qgd

VDD ≈ 16 V, VGS = 5 V, ID = 9.1 A

⎯

7

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

⎯

36.4

A

Forward voltage (diode)

VDSF

IDR = 9.1 A, VGS = 0 V

⎯

−1.2

V

VDD ≈ 10 V

0 V

VGS

5 V

ID = 4.5 A

VOUT

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