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2SK2719 датащи(PDF) 2 Page - Toshiba Semiconductor |
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2SK2719 датащи(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2719 2009-09-29 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±10 μA Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cut-off current IDSS VDS = 720 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 1.5 A ⎯ 3.7 4.3 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 20 V, ID = 1.5 A 0.65 2.6 ⎯ S Input capacitance Ciss ⎯ 750 ⎯ pF Reverse transfer capacitance Crss ⎯ 10 ⎯ pF Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 70 ⎯ pF Rise time tr ⎯ 15 ⎯ Turn-on time ton ⎯ 55 ⎯ Fall time tf ⎯ 30 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 110 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 25 ⎯ nC Gate-source charge Qgs ⎯ 13 ⎯ nC Gate-drain (“miller”) charge Qgd VDD ∼− 400 V, VGS = 10 V, ID = 3 A ⎯ 12 ⎯ nC Source-Drain Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 3 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 9 A Diode forward voltage VDSF IDR = 3 A, VGS = 0 V ⎯ ⎯ −1.9 V Reverse recovery time trr ⎯ 1100 ⎯ ns Reverse recovery charge Qrr IDR = 3 A, VGS = 0 V dIDR/dt = 100 A/μs ⎯ 7.5 ⎯ μC Marking 0 V 10 V VGS VDD ∼− 200 V ID = 1.5 A VOUT K2719 TOSHIBA Lot No. Note 4 Part No. (or abbreviation code) Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. |
Аналогичный номер детали - 2SK2719_09 |
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Аналогичное описание - 2SK2719_09 |
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