поискавой системы для электроныых деталей |
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2SK3313 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SK3313 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK3313 2010-04-13 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3313 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications Fast reverse recovery time : trr = 90 ns (typ.) Built-in high-speed free-wheeling diode Low drain−source ON-resistance : RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 500 V Drain−gate voltage (RGS = 20 kΩ) VDGR 500 V Gate−source voltage VGSS ±30 V DC (Note 1) ID 12 A Drain current Pulse (Note 1) IDP 48 A Drain power dissipation (Tc = 25°C) PD 40 W Single pulse avalanche energy (Note 2) EAS 324 mJ Avalanche current IAR 12 A Repetitive avalanche energy (Note 3) EAR 4.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 3.125 °C / W Thermal resistance, channel to ambient Rth (ch−a) 62.5 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.83 mH, RG = 25 Ω, IAR = 12 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC — JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) |
Аналогичный номер детали - 2SK3313_10 |
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Аналогичное описание - 2SK3313_10 |
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