TPC8A02-H

2006-11-16

1

Ｔ

OSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ)

TPC8A02-H

High-Efficiency DC/DC Converter Applications

Notebook PC Applications

Portable-Equipment Applications

• Built-in schottky barrier diode

• High-speed switching.

Characteristic

Symbol

Rating

Unit

Drain-source voltage

30

V

30

V

Gate-source voltage

±20

V

DC

(Note 1)

16

Drain current

Pulse (Note 1)

48

A

Drain power dissipation (t

= 10 s)

(Note 2a)

1.9

W

Drain power dissipation (t

= 10 s)

(Note 2b)

1.0

W

Single-pulse avalanche energy

(Note 3)

166

mJ

Avalanche current

16

A

Repetitive avalanche energy

(Note 2a) (Note 4)

0.11

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: For Notes 1 to 5, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care. Schottky barrier diodes have

large-reverse-current-leakage characteristic compared to other rectifier products. This current leakage combined with

improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into

consideration during design.

Unit: mm

1,2,3

SOURCE，ANODE

4

GATE

5,6,7,8

DRAIN，CATHODE

JEDEC

―

JEITA

―

TOSHIBA

2-6J1B

Weight: 0.085 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4