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TPCA8104 датащи(PDF) 5 Page - Toshiba Semiconductor

номер детали TPCA8104
подробное описание детали  High-Side Switching Applications
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
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TPCA8104 датащи(HTML) 5 Page - Toshiba Semiconductor

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TPCA8104
2006-11-17
5
Drain
−source voltage VDS (V)
C – VDS
−0.1
10
100
10000
−1
−10
−100
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
Ciss
Coss
Crss
Case temperature Tc (°C)
RDS (ON) – Tc
Drain
−source voltage VDS (V)
IDR – VDS
Case temperature Tc (°C)
Vth – Tc
0
−0.5
−1.5
−2.0
−2.5
−80
−40
0
40
80
120
160
Common source
VDS = −10 V
ID = −1mA
Pulse test
Ambient temperature Ta (°C)
PD – Ta
160
−40
0
40
80
120
−80
50
40
30
20
0
0
−0.1
Common source
Tc
= 25°C
Pulse test
0.2
−1
−10
−100
−1000
0.8
1.0
−3
−10
0.4
1.2
3.0
1.0
0
0
40
80
120
0.5
2.0
2.5
160
(1)
(2)
Total gate charge Qg (nC)
Dynamic input/output
characteristics
0
20
60
Common source
ID = −40 A
Tc
= 25°C
Pulse test
VDD = −48 V
VDS
VGS
80
120
−50
−20
0
−30
−40
−30
−25
0
−24
−12
−10
−15
−60
10
Common source
Pulse test
VGS = −10V
VGS = −4 V
−20
ID = −10 A, −20 A, −40 A
ID = −40 A
−10
0.6
−5
−1
VGS = 0 V
1000
−1.0
1.5
40
100
−20
−5
−10
VDD = −48 V
−12
−24
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
t = 10s


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