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TPCS8303 датащи(PDF) 1 Page - Toshiba Semiconductor

номер детали TPCS8303
подробное описание детали  Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8303 датащи(HTML) 1 Page - Toshiba Semiconductor

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TPCS8303
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
TPCS8303
Lithium Ion Battery Applications
Notebook PC Applications
Portable Machines and Tools
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 18 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.45~−1.2 V (VDS = −10 V, ID = −200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−20
V
Gate-source voltage
VGSS
±12
V
DC
(Note 1)
ID
−5
Drain current
Pulse
(Note 1)
IDP
−20
A
Single-device
operation (Note 3a)
PD (1)
1.1
Drain power
dissipation
(t
= 10 s)
(Note 2a)
Single-device value
at dual operation
(Note 3b)
PD (2)
0.75
W
Single-device
operation (Note 3a)
PD (1)
0.6
Drain power
dissipation
(t
= 10 s)
(Note 2b)
Single-device value
at dual operation
(Note 3b)
PD (2)
0.35
W
Single pulse avalanche energy
(Note 4)
EAS
16.3
mJ
Avalanche current
IAR
−5
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.075
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4


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