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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFH5106PBF датащи(PDF) 1 Page - International Rectifier |
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IRFH5106PBF датащи(HTML) 1 Page - International Rectifier |
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1 / 8 page  www.irf.com 1 03/12/10 IRFH5106PbF HEXFET® Power MOSFET Notes through are on page 8 PD -95959 Features and Benefits Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters PQFN 5X6 mm Note Form Quantity IRFH5106TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5106TR2PBF PQFN 5mm x 6mm Tape and Reel 1000 Orderable part number Package Type Standard Pack Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation g PD @ TC(Bottom) = 25°C Power Dissipation g Linear Derating Factor g W/°C TJ Operating Junction and TSTG Storage Temperature Range V W A °C Max. 21 63 400 ±20 60 17 100 -55 to + 150 3.6 0.029 114 VDS 60 V RDS(on) max (@VGS = 10V) 5.6 m Ω Qg (typical) 50 nC RG (typical) 1.4 Ω ID (@Tc(Bottom) = 25°C) 100 A Features Benefits Low RDSon (≤ 5.6mΩ) Lower Conduction Losses Low Thermal Resistance to PCB ( ≤ 0.5°C/W) Enables better thermal dissipation 100% Rg tested Increased Reliability Low Profile ( ≤ 0.9 mm) results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability |
Аналогичный номер детали - IRFH5106PBF |
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Аналогичное описание - IRFH5106PBF |
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