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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFH5406TR2PBF датащи(PDF) 2 Page - International Rectifier |
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IRFH5406TR2PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFH5406PbF 2 www.irf.com S D G Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case f ––– 2.7 RθJC (Top) Junction-to-Case f ––– 15 °C/W RθJA Junction-to-Ambient g ––– 35 RθJA (<10s) Junction-to-Ambient g ––– 22 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 60 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 11.4 14.4 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -8.6 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 27 ––– ––– S Qg Total Gate Charge ––– 23 35 Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.4 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.7 ––– Qgd Gate-to-Drain Charge ––– 7.1 ––– Qgodr Gate Charge Overdrive ––– 11 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 8.8 ––– Qoss Output Charge ––– 7.4 ––– nC RG Gate Resistance ––– 1.1 ––– Ω td(on) Turn-On Delay Time ––– 5.4 ––– tr Rise Time ––– 8.7 ––– td(off) Turn-Off Delay Time ––– 12 ––– tf Fall Time ––– 3.5 ––– Ciss Input Capacitance ––– 1256 ––– Coss Output Capacitance ––– 206 ––– Crss Reverse Transfer Capacitance ––– 92 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 20 30 ns Qrr Reverse Recovery Charge ––– 74 111 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance VDS = VGS, ID = 50µA VGS = 10V Typ. VDS = 60V, VGS = 0V VDS = 16V, VGS = 0V VDD = 30V, VGS = 10V ––– RG=1.7Ω VDS = 25V, ID = 24A VDS = 60V, VGS = 0V, TJ = 125°C µA ID = 24A ID = 24A VGS = 0V VDS = 25V TJ = 25°C, IF = 24A, VDD = 30V di/dt = 500A/µs eà TJ = 25°C, IS = 24A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions Max. 45 24 ƒ = 1.0MHz Conditions VGS = 0V, ID = 250uA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 24A e ––– ––– 160 ––– ––– 40 MOSFET symbol nA ns A pF nC VDS = 30V ––– VGS = 20V VGS = -20V |
Аналогичный номер детали - IRFH5406TR2PBF |
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Аналогичное описание - IRFH5406TR2PBF |
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