BU9883FV-W

Technical Note

2/18

www.rohm.com

2009.04 - Rev.B

© 2009 ROHM Co., Ltd. All rights reserved.

●

Memory cell characteristics(Ta=25℃, VCC0～3 = 3.0～5.5V)

*1:Not 100％ TESTED

●

Input/output capacity (Ta=25℃, Frequency=5MHz)

Parameter

Symbol

Min.

Typ.

Max.

Unit

SDA pins (SDA0,1,2,3)

*1

Cin

-

7

-

pF

SCL pins (SCL0,1,2,3)

*1

Cin2

-

7

-

pF

*1:Not 100％ TESTED

●

EEPROM DC operating characteristics (Unless otherwise specified, Ta=-40～85℃, VCC0～3 = 3.0～5.5V)

Parameter

Symbol

Specification

Unit

Test condition

Min.

Typ.

Max.

"H" Input Voltage0

VIH0

0.7xVCC0

-

VCC0+0.5

V

3.0≦VCC0≦5.5V(SCL0, SDA0)

"L" Input Voltage0

VIL0

-0.3

-

0.3xVCC0

V

3.0≦VCC0≦5.5V(SCL0, SDA0)

"H" Input Voltage1

VIH1

0.7xVCC1

-

VCC1+0.5

V

3.0≦VCC1≦5.5V(SCL1, SDA1)

"L" Input Voltage1

VIL1

-0.3

-

0.3xVCC1

V

3.0≦VCC1≦5.5V(SCL1, SDA1)

"H" Input Voltage2

VIH2

0.7xVCC2

-

VCC2+0.5

V

3.0≦VCC2≦5.5V(SCL2, SDA2)

"L" Input Voltage2

VIL2

-0.3

-

0.3xVCC2

V

3.0≦VCC2≦5.5V(SCL2, SDA2)

"H" Input Voltage3

VIH3

0.7xVCC3

-

VCC3+0.5

V

3.0≦VCC3≦5.5V(SCL3, SDA3)

"H" Input Voltage3

VIL3

-0.3

-

0.3xVCC3

V

3.0≦VCC3≦5.5V(SCL3, SDA3)

"L" Output Voltage0

VOL0

-

-

0.4

V

IOL=3.0mA , 3.0V≦VCC0≦5.5V(SDA0)

"L" Output Voltage1

VOL1

-

-

0.4

V

IOL=3.0mA , 3.0V≦VCC1≦5.5V(SDA1)

"L" Output Voltage2

VOL2

-

-

0.4

V

IOL=3.0mA , 3.0V≦VCC2≦5.5V(SDA2)

"L" Output Voltage3

VOL3

-

-

0.4

V

IOL=3.0mA , 3.0V≦VCC3≦5.5V(SDA3)

WP "H" Input Voltage

VIH4

0.7xVCC0

-

VCC0+0.3

V

3.0≦VCC0≦5.5V(WPB)

WP "L" Input Voltage

VIL4

-0.3

-

0.3xVCC

V

3.0≦VCC0≦5.5V(WPB)

Input Leakage Current0

ILI0

-1

-

1

μA

VIN=0～5.5V(SCL0～3)

Input Leakage Current1

ILI1

55

110

230

μA

WPB=5.5V , VCC=5.5V

Output Leakage Current0

ILO0

-1

-

1

μA

VOUT=0～5.5(SDA0～3)

Operating Current

ICC1

-

-

2.0

mA

VCC0=5.5V, fSCL=400kHz，tWR=5ms

Byte Write, Page Write

ICC2

-

-

1.0

mA

VCC0～3=5.5V, fSCL=400kHz

Random Read, Current Read,Sequential

Read, (each port operation)

Standby Current

ISB0

-

-

100

μA

VCC～0=5.5V, SDA0～3=SCL0～3=5.5V,

WPB=GND

Standby Current

ISB1

-

-

100

μA

VCC1=5.5V, SDA0～3=SCL0～3=5.5V,

WPB=GND

Standby Current

ISB2

-

-

100

μA

VCC2=5.5V, SDA0～3=SCL0～3=5.5V,

WPB=GND

Standby Current

ISB3

-

-

100

μA

VCC3=5.5V, SDA0～3=SCL0～3=5.5V,

WPB=GND

○

This product is not designed for protection against radioactive rays.

Parameter

Specification

Unit

Min.

Typ.

Max.

Write/Erase Cycle

*1

1,000,000

-

-

Cycles

Data Retention

*1

40

-

-

Years