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CAT25010ZE-T3 датащи(PDF) 8 Page - ON Semiconductor

номер детали CAT25010ZE-T3
подробное описание детали  1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM
Download  15 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT25010ZE-T3 датащи(HTML) 8 Page - ON Semiconductor

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CAT25010, CAT25020, CAT25040
http://onsemi.com
8
READ OPERATIONS
Read from Memory Array
To read from memory, the host sends a READ instruction
followed by a 8−bit address (for the CAT25040, bit 3 of the
read instruction opcode contains A8 address bit).
After receiving the last address bit, the CAT25010/20/40
will respond by shifting out data on the SO pin (as shown in
Figure 9). Sequentially stored data can be read out by simply
continuing to run the clock. The internal address pointer is
automatically incremented to the next higher address as data
is shifted out. After reaching the highest memory address,
the address counter “rolls over” to the lowest memory
address, and the read cycle can be continued indefinitely.
The read operation is terminated by taking CS high.
Read Status Register
To read the status register, the host simply sends a RDSR
command. After receiving the last bit of the command, the
CAT25010/20/40 will shift out the contents of the status
register on the SO pin (Figure 10). The status register may
be read at any time, including during an internal write cycle.
While the internal write cycle is in progress, the RDSR
command will output the RDY (Ready) bit status only (i.e.,
data out = FFh).
Figure 9. READ Timing
SCK
SI
SO
BYTE ADDRESS
01
23
45
67
89
D7 D6 D5 D4 D3 D2 D1 D0
DATA OUT
MSB
HIGH IMPEDANCE
OPCODE
13
12
14 15 16 17 18 19 20 21 22
00
00
X*
0
1
1
Dashed Line = mode (1, 1)
* X = 0 for CAT25010, CAT25020. X = A8 for CAT25040
A0
A7
CS
Figure 10. RDSR Timing
01
2
3
4
5
6
7
8
10
911
12
13
14
SCK
SI
DATA OUT
MSB
HIGH IMPEDANCE
OPCODE
SO
7
6
5
4
3
2
1
0
00
0
00
1
0
1
Dashed Line = mode (1, 1)
CS


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