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CSPEMI202AG датащи(PDF) 5 Page - ON Semiconductor |
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CSPEMI202AG датащи(HTML) 5 Page - ON Semiconductor |
5 / 9 page CSPEMI202AG Rev. 3 | Page 5 of 9 | www.onsemi.com ELECTRICAL OPERATING CHARACTERISTICS 1 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS R 1 Resistance 61 68 75 Ω C 1 Capacitance 38 47 56 pF I LEAK Diode Leakage Current V IN=5.0V 1.0 μA V SIG Signal Voltage Positive Clamp Negative Clamp I LOAD = 10mA 5 -15 7 -10 15 -5 V V V ESD In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Level 4 Note 2 ±15 ±8 kV kV V CL Clamping Voltage during ESD Discharge MIL-STD-883 (Method 3015), 8kV Positive Transients Negative Transients Notes 2 and 3 +15 -19 V V f C Cut-off frequency Z SOURCE = 50Ω, ZLOAD = 50Ω R = 68 Ω, C = 47pF 60 MHz Note 1: T A=25°C unless otherwise specified. Note 2: ESD applied to input and output pins with respect to GND, one at a time. Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping voltage is measured at Pin C1. |
Аналогичный номер детали - CSPEMI202AG |
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Аналогичное описание - CSPEMI202AG |
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