N08L6182AB27I datasheet(5/10 Pages) ONSEMI

номер детали	N08L6182AB27I

подробное описание детали	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16bit

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Rev. 8 | Page 5 of 10 | www.onsemi.com

N08L6182A

Timing Test Conditions

Item

Input Pulse Level

0.1VCC to 0.9 VCC

Input Rise and Fall Time

5ns

Input and Output Timing Reference Levels

0.5 VCC

Output Load

30pF

Operating Temperature

-40 to +85 oC

Timing

Item

Symbol

1.65 - 2.2 V

1.8 - 2.2 V

Units

Min.

Max.

Min.

Max.

Read Cycle Time

tRC

85

70

ns

Address Access Time (Random Access)

tAA

85

70

ns

Address Access Time (Page Mode)

tAAP

30

25

ns

Chip Enable to Valid Output

tCO

85

70

ns

Output Enable to Valid Output

tOE

30

25

ns

Byte Select to Valid Output

tLB, tUB

85

70

ns

Chip Enable to Low-Z output

tLZ

10

ns

Output Enable to Low-Z Output

tOLZ

55

ns

Byte Select to Low-Z Output

tLBZ, tUBZ

10

ns

Chip Disable to High-Z Output

tHZ

0200

20

ns

Output Disable to High-Z Output

tOHZ

0200

20

ns

Byte Select Disable to High-Z Output

tLBHZ, tUBHZ

0200

20

ns

Output Hold from Address Change

tOH

55

ns

Write Cycle Time

tWC

85

70

ns

Chip Enable to End of Write

tCW

50

ns

Address Valid to End of Write

tAW

50

ns

Byte Select to End of Write

tLBW, tUBW

50

ns

Write Pulse Width

tWP

40

ns

Address Setup Time

tAS

00

ns

Write Recovery Time

tWR

00

ns

Write to High-Z Output

tWHZ

20

ns

Data to Write Time Overlap

tDW

40

ns

Data Hold from Write Time

tDH

00

ns

End Write to Low-Z Output

tOW

55

ns

Аналогичный номер детали - N08L6182AB27I

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	N08L63W2A	192Kb / 10P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit July 2008 - Rev. 8
	N08L63W2AB27I	192Kb / 10P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit July 2008 - Rev. 8
	N08L63W2AB27IT	192Kb / 10P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit July 2008 - Rev. 8
	N08L63W2AB7I	192Kb / 10P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit July 2008 - Rev. 8
	N08L63W2AB7IT	192Kb / 10P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit July 2008 - Rev. 8

More results

Аналогичное описание - N08L6182AB27I

производитель	номер детали	датащи	подробное описание детали
NanoAmp Solutions, Inc.	N08L1618C2A	251Kb / 10P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16bit
	N08L163WC2C	241Kb / 9P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit
	N08L163WC2A	250Kb / 10P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit
	N08L163WC1C	222Kb / 9P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit
ON Semiconductor	N08L63W2A	192Kb / 10P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit July 2008 - Rev. 8
AMI SEMICONDUCTOR	N08M1618L1A	195Kb / 11P	8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K 횞 16 bit
ON Semiconductor	N02L63W3A	664Kb / 11P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 횞 16bit July 2008 - Rev. 15
NanoAmp Solutions, Inc.	N08L083WC2C	216Kb / 9P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 횞 8 bit
NanoAmp Solutions, Inc.	N08T1630CXB	253Kb / 9P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
Renesas Technology Corp	RMLV0816BGBG	309Kb / 15P	8Mb Advanced LPSRAM (512k word 횞 16bit)

More results

N08L6182AB27I датащи(PDF) 5 Page - ON Semiconductor

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Аналогичный номер детали - N08L6182AB27I

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