2SD2195 / 2SD1980 / 2SD1867

Transistors

Rev.B

2/3

Package

Code

Basic ordering unit (pieces)

Marking

∗

Type

2SD2195

2SD1980

2SD1867

MPT3

CPT3

ATV

1k to 10k

1k to 10k

1k to 10k

DP

T100

1000

2500

2500

TL

TV2

−−

Electrical characteristics (Ta=25

°C)

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Collector cutoff current

Emitter cutoff current

Output capacitance

Collector-emitter saturation voltag

DC current transfer ratio

Measured using pulse current.

∗

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Cob

100

100

−

−

−

−

−

−

−

−

25

80

−

−

10

3

−

−

V

V

−−

V

µA

mA

pF

= 50µA

= 5mA

= 5mA

= 100V

= 5V

−−

−−

1.5

V

2.0

V

= 1A/1mA

1000

−

10000

−

∗

∗

Emitter-base breakdown voltage

Base-Emitter saturation voltage

Transition frequency

6

MHz

Electrical characteristic curves

2.0

5

23

4

1

0

1.2

1.6

0.4

0.8

0

(V)

Fig.1 Grounded emitter output

characteristics

Ta=25

°C

1mA

IB=0.3mA

0.4mA

0.5mA

0.6mA

0.7mA

0.8mA

0.9mA

2.6

3.0

1.4

1.0

1.8

2.2

0.6

0.2

0.01

0.02

0.05

0.1

0.2

0.5

10

1

2

5

(V)

Fig.2 Grounded emitter propagation

characteristics

10

1

0.1

0.01

0.001

50

100

200

500

1000

2000

5000

10000

20

10

(A)

Fig.3 DC current gain vs. collector current

Ta=25

°C

2V

0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1

2

5

10

10

20

50

100

200

500

1000

2000

5000

10000

(A)

Fig.4 DC current gain vs. collector current

100

20

10

1

0.1

0.2

0.5

2

5

50

0.0.1 0.0.2

0.0.5 0.1

0.2

0.5

1

2

5

10

COLLECTOR CURRENT : IC (A)

Fig.5 Collector-emitter saturation voltage

vs.collector current

Ta=25

°C

500

100

20

10

1

0.1

0.2

0.5

2

5

50

0.0.1 0.0.2

0.0.5 0.1

0.2

0.5

1

2

5

10

COLLECTOR CURRENT : IC (A)

Fig.6 Collector-emitter saturation voltage

vs.collector current

Ta=

−25

°C

100

°C

25

°C