KM4132G271BQR-7 datasheet(11/51 Pages) SAMSUNG

номер детали	KM4132G271BQR-7

подробное описание детали	128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL

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производитель	SAMSUNG [Samsung semiconductor]

домашняя страница	http://www.samsung.com/Products/Semiconductor

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11 / 51 page

KM4132G271B

CMOS SGRAM

- 11

Rev. 2.4 (May 1998)

SGRAM vs SDRAM

If DSF is low, SGRAM functionality is identical to SDRAM functionality .

SGRAM can be used as an unified memory by the appropriate DSF control

--> SGRAM=Graphic Memory + Main Memory

Function

MRS

Bank Active

Write

DSF

L

H

L

H

L

H

SGRAM

Function

MRS

SMRS

Bank Active

with

Write per bit

Disable

Bank Active

with

Write per bit

Enable

Normal

Write

Block

Write

3. Auto refresh functions as same as CBR refresh of DRAM.

The automatical precharge without Row precharge command is meant by "Auto".

Auto/Self refresh can be issued only at both precharge state.

4. A9 : Bank select address.

If "Low" at read, (block) write, Row active and precharge, bank A is selected.

If "High" at read, (block) write, Row active and precharge, bank B is selected.

If A8 is "High" at Row precharge, A9 is ignored and both banks are selected.

5. It is determined at Row active cycle.

whether Normal/Block write operates in write per bit mode or not.

For A bank write, at A bank Row active, for B bank write, at B bank Row active.

Terminology : Write per bit =I/O mask

(Block) Write with write per bit mode=Masked(Block) Write

6. During burst read or write with auto precharge, new read/(block) write command cannot be issued.

Another bank read/(block) write command can be issued at

tRP after the end of burst.

7. Burst stop command is valid only at full page burst length.

8. DQM sampled at positive going edge of a CLK.

masks the data-in at the very CLK(Write DQM latency is 0)

but makes Hi-Z state the data-out of 2 CLK cycles after.(Read DQM latency is 2)

9. Graphic features added to SDRAM

′s original features.

If DSF is tied to low, graphic functions are disabled and chip operates as a 8M SDRAM with 32 DQ

′s.

SIMPLIFIED TRUTH TABLE

Аналогичный номер детали - KM4132G271BQR-7

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	KM4132G271A	1,000Kb / 48P	128K x 32Bit x 2 Banks Synchronous Graphic RAM
	KM4132G271A-10	1,000Kb / 48P	128K x 32Bit x 2 Banks Synchronous Graphic RAM
	KM4132G271A-12	1,000Kb / 48P	128K x 32Bit x 2 Banks Synchronous Graphic RAM
	KM4132G271A-8	1,000Kb / 48P	128K x 32Bit x 2 Banks Synchronous Graphic RAM
	KM4132G271AQ-10	1,000Kb / 48P	128K x 32Bit x 2 Banks Synchronous Graphic RAM

More results

Аналогичное описание - KM4132G271BQR-7

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	KM4132G271A	1,000Kb / 48P	128K x 32Bit x 2 Banks Synchronous Graphic RAM
Samsung semiconductor	K4G323222M	1Mb / 48P	512K x 32Bit x 2 Banks Synchronous Graphic RAM
List of Unclassifed Man...	M32L32321SA	989Kb / 54P	512K x 32 Bit x 2 Banks Synchronous Graphic RAM
AMIC Technology	A45L9332A	1Mb / 55P	256K X 32 Bit X 2 Banks Synchronous Graphic RAM
List of Unclassifed Man...	M32L1632512A	879Kb / 54P	256K x 32 Bit x 2 Banks Synchronous Graphic RAM
Samsung semiconductor	K4S643232F	101Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232E-TI	100Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232C	1Mb / 43P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232E	102Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	KM432S2030C	1Mb / 43P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

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