KM416C254D, KM416V254D

CMOS DRAM

This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access

of memory cells within the same row. Power supply voltage(+5.0V or +3.3V), Access time (-5,-6 or -7), power consumption(Normal or

Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-

only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 EDO Mode

DRAM family is fabricated using Samsung

′s advanced CMOS process to realize high band-width, low power consumption and high reli-

ability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

• Part Identification

- KM416C254D/DL (5V, 512 Ref.)

- KM416V254D/DL (3.3V, 512 Ref.)

• Extended Data Out Mode operation

• 2 CAS Byte/Wrod Read/Write operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Available in 40-pin SOJ 400mil and 44(40)-pin

packages

• Triple +5V

±10% power supply (5V product)

• Triple +3.3V

±0.3V power supply (3.3V product)

Control

Clocks

VBB Generator

Refresh Timer

Refresh Control

Refresh Counter

Row Address Buffer

Col. Address Buffer

Row Decoder

Column Decoder

Lower

Data out

Buffer

RAS

UCAS

LCAS

W

Vcc

Vss

DQ0

to

DQ7

Memory Array

262,144 x16

Cells

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

256K x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION

FEATURES

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

Part

NO.

Refresh

cycle

Refresh period

Normal

L-ver

C254D

5V

512

8ms

128ms

V254D

3.3V

• Performance Range

Speed

Remark

-5

50ns

15ns

84ns

20ns

5V only

-6

60ns

15ns

104ns

25ns

5V/3.3V

-7

70ns

20ns

124ns

30ns

5V/3.3V

• Active Power Dissipation

Speed

3.3V(512 Ref.)

5V(512 Ref.)

-5

-

605

-6

255

495

-7

235

440

Unit : mW

Upper

Data in

Buffer

Upper

Data out

Buffer

Lower

Data in

Buffer

DQ8

to

DQ15

OE

A0~A8