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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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KM416C4104C датащи(PDF) 5 Page - Samsung semiconductor |
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KM416C4104C датащи(HTML) 5 Page - Samsung semiconductor |
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5 / 36 page  KM416C4004C, KM416C4104C CMOS DRAM CAPACITANCE (TA=25 °C, VCC=5.0V, f=1MHz) Parameter Symbol Min Max Units Input capacitance [A0 ~ A12] CIN1 - 5 pF Input capacitance [RAS, UCAS, LCAS, W, OE] CIN2 - 7 pF Output capacitance [DQ0 - DQ15] CDQ - 7 pF AC CHARACTERISTICS (0 °C≤TA≤70°C, See note 1,2) Test condition : VCC=5.0V ±10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.0/0.8V Parameter Symbol -5 -6 Units Note Min Max Min Max Random read or write cycle time tRC 84 104 ns Read-modify-write cycle time tRWC 116 138 ns Access time from RAS tRAC 50 60 ns 3,4,10 Access time from CAS tCAC 13 15 ns 3,4,5 Access time from column address tAA 25 30 ns 3,10 CAS to output in Low-Z tCLZ 3 3 ns 3 Output buffer turn-off delay from CAS tCEZ 3 13 3 13 ns 6,21 OE to output in Low-Z tOLZ 3 3 ns 3 Transition time (rise and fall) tT 1 50 1 50 ns 2 RAS precharge time tRP 30 40 ns RAS pulse width tRAS 50 10K 60 10K ns RAS hold time tRSH 13 15 ns CAS hold time tCSH 38 45 ns CAS pulse width tCAS 8 10K 10 10K ns RAS to CAS delay time tRCD 20 37 20 45 ns 4 RAS to column address delay time tRAD 15 25 15 30 ns 10 CAS to RAS precharge time tCRP 5 5 ns Row address set-up time tASR 0 0 ns Row address hold time tRAH 10 10 ns Column address set-up time tASC 0 0 ns Column address hold time tCAH 8 10 ns 13 Column address to RAS lead time tRAL 25 30 ns 13 Read command set-up time tRCS 0 0 ns Read command hold time referenced to CAS tRCH 0 0 ns 8 Read command hold time referenced to RAS tRRH 0 0 ns 8 Write command hold time tWCH 10 10 ns Write command pulse width tWP 10 10 ns Write command to RAS lead time tRWL 13 15 ns Write command to CAS lead time tCWL 8 10 ns 16 Data set-up time tDS 0 0 ns 9,19 |
Аналогичный номер детали - KM416C4104C |
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Аналогичное описание - KM416C4104C |
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