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KM44C4103C датащи(PDF) 1 Page - Samsung semiconductor |
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KM44C4103C датащи(HTML) 1 Page - Samsung semiconductor |
1 / 20 page CMOS DRAM KM44C4003C, KM44C4103C This is a family of 4,194,304 x 4 bit Quad CAS with Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. Four separate CAS pins provide for seperate I/O operation allowing this device to operate in parity mode. This 4Mx4 Fast Page Mode Quad CAS DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band- width, low power consumption and high reliability. • Part Identification - KM44C4003C/C-L (5V, 4K Ref.) - KM44C4103C/C-L (5V, 2K Ref.) • Fast Page Mode operation • Four seperate CAS pins provide for separate I/O operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Self-refresh capability (L-ver only) • Fast paralleltest mode capability • TTL compatible inputs and outputs • Early Write or output enable controlled write • JEDEC Standard pinout • Available in Plastic SOJ and TSOP(II) packages • Single +5V ±10% power supply Control Clocks RAS CAS0 - 3 W Vcc Vss DQ0 to DQ3 A0-A11 (A0 - A10) *1 A0 - A9 (A0 - A10) *1 Memory Array 4,194,304 x 4 Cells SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION FEATURES FUNCTIONAL BLOCK DIAGRAM • Refresh Cycles Part NO. Refresh cycle Refresh period Normal L-ver C4003C 4K 64ms 128ms C4103C 2K 32ms • Performance Range Speed tRAC tCAC tRC tPC Remark -5 50ns 13ns 90ns 35ns 5V/3.3V -6 60ns 15ns 110ns 40ns 5V/3.3V • Active Power Dissipation Speed Refresh Cycle 4K 2K -5 495 605 -6 440 550 Unit : mW Data out Buffer Data in Buffer OE Note) *1 : 2K Refresh Col. Address Buffer Row Address Buffer Refresh Counter Refresh Control Refresh Timer Column Decoder Row Decoder VBB Generator |
Аналогичный номер детали - KM44C4103C |
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Аналогичное описание - KM44C4103C |
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