поискавой системы для электроныых деталей |
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KM681000BLRI-10L датащи(PDF) 6 Page - Samsung semiconductor |
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KM681000BLRI-10L датащи(HTML) 6 Page - Samsung semiconductor |
6 / 11 page PRELIMINARY Revision 0.3 KM681000B Family CMOS SRAM April 1996 DATA RETENTION CHARACTERISTICS * 1) Commercial Product : TA=0 to 70¡É, unless otherwise specified 2) Extended Product : TA=-25 to 85¡É, unless otherwise specified 2) Industrial Product : TA=-40 to 85¡É, unless otherwise specified ** TA=25¡É *** CS1¡ÃVCC-0.2V,CS2¡ÃVCC-0.2V(CS1 controlled) or CS2¡Â0.2V(CS2 controlled) Item Symbol Test Condition* Min Typ** Max Unit Vcc for data retention VDR CS1***¡ÃVcc-0.2V 2.0 - 5.5 V Data retention current IDR KM681000BL KM681000BL-L Vcc=3.0V CS1¡ÃVcc-0.2V L-Ver LL-Ver - - 1 0.5 50 10 §Ë KM681000BLE KM681000BLE-L L-Ver LL-Ver - - - - 50 25 KM681000BLI KM681000BLI-L L-Ver LL-Ver - - - - 50 25 Data retention set-up time tRDR See data retention waveform 0 - - ms Recovery time tRDR 5 - - VCC 0.4V VDR CS2 GND Data Retention Mode CS2 ¡Â 0.2V 2) CS2 controlled 4.5V DATA RETENTION TIMING DIAGRAM VCC 4.5V 2.2V VDR CS1 GND Data Retention Mode CS1¡Ã VCC - 0.2V 1) CS1 Controlled tSDR tRDR tSDR tRDR |
Аналогичный номер детали - KM681000BLRI-10L |
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Аналогичное описание - KM681000BLRI-10L |
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