KM6164002E datasheet(4/9 Pages) SAMSUNG

номер детали	KM6164002E

подробное описание детали	CMOS SRAM

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производитель	SAMSUNG [Samsung semiconductor]

домашняя страница	http://www.samsung.com/Products/Semiconductor

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KM6164002, KM6164002E, KM6164002I

CMOS SRAM

PRELIMINARY

Rev 2.0

- 6 -

June -1997

TIMING WAVE FORM OF READ CYCLE(2)(WE=VIH)

CS

OE

Data Out

Data Valid

ADD

NOTES(READ CYCLE)

1. WE is high for read cycle.

2. All read cycle timing is referenced from the last valid address to the first transition address.

3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V OH or VOL Levels.

4. At any given temperature and voltage condition, t HZ(Max.) is less than t LZ (Min.) both for a given device and from device to device.

5. Transition is measured

±200§Æ from steady state voltage with Load(B). This parameter is sampled and not 100% tested.

6. Device is continuously selected with CS=VIL.

7. Address valid prior to coincident with CS transition low.

8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e.

UB, LB

TIMING WAVE FORM OF WRITE CYCLE(1)(OE=Clock)

OE

CS

Data In

WE

High-Z

ADD

Data Out

Data Valid

High-Z(8)

tRC

tAA

tCO

tBLZ(4,5)

tOE

tBA

tOLZ

tLZ(4,5)

tHZ(3,4,5)

tBHZ(3,4,5)

tOHZ

tOH

tWC

tAW

tWP(2)

tBW

tCW(3)

tAS(4)

tOHZ(6)

tDW

tDH

tWR(5)

Аналогичный номер детали - KM6164002E

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	KM6164000B	151Kb / 9P	256Kx16 bit Low Power CMOS Static RAM
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	KM6164000BLR-7L	151Kb / 9P	256Kx16 bit Low Power CMOS Static RAM

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Аналогичное описание - KM6164002E

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