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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BF1202 датащи(PDF) 3 Page - NXP Semiconductors |
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BF1202 датащи(HTML) 3 Page - NXP Semiconductors |
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3 / 15 page  2010 Sep 16 3 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Ts is the temperature of the soldering point of the source lead. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 10 V ID drain current 30 mA IG1 gate 1 current 10 mA IG2 gate 2 current 10 mA Ptot total power dissipation BF1202; BF1202R Ts 113 C; note 1 200 mW BF1202WR Ts 119 C; note 1 200 mW Tstg storage temperature 65 +150 C Tj operating junction temperature 150 C SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point BF1202; BF1202R 185 K/W BF1202WR 155 K/W handbook, halfpage 050 (1) (2) Ts (°C) Ptot (mW) 100 200 250 0 200 150 150 100 50 MCD951 Fig.4 Power derating curve. (1) BF1202WR. (2) BF1202; BF1202R. |
Аналогичный номер детали - BF1202_10 |
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Аналогичное описание - BF1202_10 |
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