поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

BUK101-50GL датащи(PDF) 4 Page - NXP Semiconductors

номер детали BUK101-50GL
подробное описание детали  PowerMOS transistor
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

BUK101-50GL датащи(HTML) 4 Page - NXP Semiconductors

  BUK101-50GL Datasheet HTML 1Page - NXP Semiconductors BUK101-50GL Datasheet HTML 2Page - NXP Semiconductors BUK101-50GL Datasheet HTML 3Page - NXP Semiconductors BUK101-50GL Datasheet HTML 4Page - NXP Semiconductors BUK101-50GL Datasheet HTML 5Page - NXP Semiconductors BUK101-50GL Datasheet HTML 6Page - NXP Semiconductors BUK101-50GL Datasheet HTML 7Page - NXP Semiconductors BUK101-50GL Datasheet HTML 8Page - NXP Semiconductors BUK101-50GL Datasheet HTML 9Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 11 page
background image
Philips Semiconductors
Product specification
PowerMOS transistor
BUK101-50GL
Logic level TOPFET
TRANSFER CHARACTERISTICS
T
mb = 25 ˚C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS = 10 V; IDM = 13 A tp ≤ 300 µs;
10
16
-
S
δ ≤ 0.01
I
D(SC)
Drain current
1
V
DS = 13 V; VIS = 5 V
-
40
-
A
SWITCHING CHARACTERISTICS
T
mb = 25 ˚C.
R
I = 50 Ω .
Refer to waveform figures and test circuits.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
Turn-on delay time
V
DD = 13 V; VIS = 5 V
-
2.5
-
µs
t
r
Rise time
resistive load R
L = 2.1 Ω
-15
-
µs
t
d off
Turn-off delay time
V
DD = 13 V; VIS = 0 V
-
10
-
µs
t
f
Fall time
resistive load R
L = 2.1 Ω
-7
-
µs
t
d on
Turn-on delay time
V
DD = 10 V; VIS = 5 V
-
2
-
µs
t
r
Rise time
inductive load I
DM = 6 A
-
4
-
µs
t
d off
Turn-off delay time
V
DD = 10 V; VIS = 0 V
-
15
-
µs
t
f
Fall time
inductive load I
DM = 6 A
-
1
-
µs
REVERSE DIODE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
S
Continuous forward current
T
mb ≤ 25 ˚C
-
26
A
REVERSE DIODE CHARACTERISTICS
T
mb = 25 ˚C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
SDS
Forward voltage
I
S = 26 A; VIS = 0 V; tp = 300 µs
-
1.0
1.5
V
t
rr
Reverse recovery time
not applicable
2
--
--
ENVELOPE CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
1 During overload before short circuit load protection operates.
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
January 1993
4
Rev 2.600


Аналогичный номер детали - BUK101-50GL

производительномер деталидатащиподробное описание детали
logo
NXP Semiconductors
BUK101-50DL PHILIPS-BUK101-50DL Datasheet
89Kb / 10P
   PowerMOS transistor Logic level TOPFET
April 1993 Rev 1.100
More results

Аналогичное описание - BUK101-50GL

производительномер деталидатащиподробное описание детали
logo
NXP Semiconductors
PHP5N40 PHILIPS-PHP5N40 Datasheet
54Kb / 7P
   PowerMOS transistor
February 1997 Rev 1.000
PHW7N60 PHILIPS-PHW7N60 Datasheet
56Kb / 7P
   PowerMOS transistor
June 1997 Rev 1.000
PHX1N40 PHILIPS-PHX1N40 Datasheet
60Kb / 7P
   PowerMOS transistor
June 1997 1 Rev 1.000
BUK436W-200A PHILIPS-BUK436W-200A Datasheet
71Kb / 7P
   PowerMOS transistor
July 1997 Rev 1.000
BUK438W-800A PHILIPS-BUK438W-800A Datasheet
65Kb / 7P
   PowerMOS transistor
February 1998 Rev 1.000
BUK444-800A PHILIPS-BUK444-800A Datasheet
67Kb / 7P
   PowerMOS transistor
April 1993 Rev 1.100
BUK444-800A PHILIPS-BUK444-800A Datasheet
52Kb / 7P
   PowerMOS transistor
April 1993 Rev 1.100
BUK453-100A PHILIPS-BUK453-100A Datasheet
57Kb / 7P
   PowerMOS transistor
April 1998 Rev 1.100
BUK455-60H PHILIPS-BUK455-60H Datasheet
91Kb / 7P
   PowerMOS transistor
August 1994 Rev 1.000
BUK456-1000B PHILIPS-BUK456-1000B Datasheet
61Kb / 7P
   PowerMOS transistor
May 1995 Rev 1.200
BUK462-100A PHILIPS-BUK462-100A Datasheet
60Kb / 7P
   PowerMOS transistor
April 1998 Rev 1.000
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com