поискавой системы для электроныых деталей |
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BUK101-50GL датащи(PDF) 4 Page - NXP Semiconductors |
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BUK101-50GL датащи(HTML) 4 Page - NXP Semiconductors |
4 / 11 page Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level TOPFET TRANSFER CHARACTERISTICS T mb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 10 V; IDM = 13 A tp ≤ 300 µs; 10 16 - S δ ≤ 0.01 I D(SC) Drain current 1 V DS = 13 V; VIS = 5 V - 40 - A SWITCHING CHARACTERISTICS T mb = 25 ˚C. R I = 50 Ω . Refer to waveform figures and test circuits. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT t d on Turn-on delay time V DD = 13 V; VIS = 5 V - 2.5 - µs t r Rise time resistive load R L = 2.1 Ω -15 - µs t d off Turn-off delay time V DD = 13 V; VIS = 0 V - 10 - µs t f Fall time resistive load R L = 2.1 Ω -7 - µs t d on Turn-on delay time V DD = 10 V; VIS = 5 V - 2 - µs t r Rise time inductive load I DM = 6 A - 4 - µs t d off Turn-off delay time V DD = 10 V; VIS = 0 V - 15 - µs t f Fall time inductive load I DM = 6 A - 1 - µs REVERSE DIODE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I S Continuous forward current T mb ≤ 25 ˚C - 26 A REVERSE DIODE CHARACTERISTICS T mb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V SDS Forward voltage I S = 26 A; VIS = 0 V; tp = 300 µs - 1.0 1.5 V t rr Reverse recovery time not applicable 2 -- -- ENVELOPE CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT L d Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad 1 During overload before short circuit load protection operates. 2 The reverse diode of this type is not intended for applications requiring fast reverse recovery. January 1993 4 Rev 2.600 |
Аналогичный номер детали - BUK101-50GL |
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Аналогичное описание - BUK101-50GL |
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