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STB35NF10 датащи(PDF) 1 Page - STMicroelectronics |
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STB35NF10 датащи(HTML) 1 Page - STMicroelectronics |
1 / 14 page June 2006 Rev 4 1/14 14 STB35NF10 STP35NF10 N-channel 100V - 0.030 Ω - 40A - D2PAK/TO-220 Low gate charge STripFET™ II Power MOSFET General features ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements. Applications ■ Switching application Internal schematic diagram Type VDSS RDS(on) ID STB35NF10 100V <0.035 Ω 40A STP35NF10 100V <0.035 Ω 40A D2PAK 1 2 3 1 3 TO-220 www.st.com Order codes Part number Marking Package Packaging STB35NF10T4 B35NF10 D2PAK Tape & reel STP35NF10 P35NF10 TO-220 Tube |
Аналогичный номер детали - STB35NF10_06 |
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Аналогичное описание - STB35NF10_06 |
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