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STF16NK60Z датащи(PDF) 5 Page - STMicroelectronics

номер детали STF16NK60Z
подробное описание детали  N-channel 600 V, 038 廓, 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH??Power MOSFET
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STF16NK60Z датащи(HTML) 5 Page - STMicroelectronics

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STF16NK60Z, STP16NK60Z, STW16NK60Z
Electrical characteristics
Doc ID 10249 Rev 5
5/15
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
14
56
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 14 A, VGS = 0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 14 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 23)
-
490
5.4
22
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 14 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see
Figure 23)
-
585
7
24
ns
nC
A
Table 9.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
BVGSO
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
30
-
-
V


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