BAS21LT3G datasheet(2/6 Pages) ONSEMI

номер детали	BAS21LT3G

подробное описание детали	High Voltage Switching Diode

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производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G

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THERMAL CHARACTERISTICS (SOT−23)

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

(Note 2)

TA = 25°C

Derate above 25°C

PD

225

1.8

mW

mW/°C

Thermal Resistance

Junction−to−Ambient (SOT−23)

RqJA

556

°C/W

Total Device Dissipation Alumina Substrate

(Note 3)

TA = 25°C

Derate above 25°C

PD

300

2.4

mW

mW/°C

Thermal Resistance Junction−to−Ambient

RqJA

417

°C/W

Junction and Storage

Temperature Range

TJ, Tstg

−55 to +150

°C

THERMAL CHARACTERISTICS (SC−88A)

Characteristic

Symbol

Max

Unit

Power Dissipation (Note 4)

PD

385

mW

Thermal Resistance −

Junction−to−Ambient

Derate Above 25°C

RqJA

328

3.0

°C/W

mW/°C

Maximum Junction Temperature

TJmax

150

°C

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

2. FR−5 = 1.0

0.75

0.062 in.

3. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.

4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Reverse Voltage Leakage Current

(VR = 100 Vdc)

BAS19

(VR = 150 Vdc)

BAS20

(VR = 200 Vdc)

BAS21

(VR = 100 Vdc, TJ = 150°C)

BAS19

(VR = 150 Vdc, TJ = 150°C)

BAS20

(VR = 200 Vdc, TJ = 150°C)

BAS21

IR

−

0.1

100

mAdc

Reverse Breakdown Voltage

(IBR = 100 mAdc)

BAS19

(IBR = 100 mAdc)

BAS20

(IBR = 100 mAdc)

BAS21

V(BR)

120

200

250

−

Vdc

Forward Voltage

(IF = 100 mAdc)

(IF = 200 mAdc)

VF

−

1.0

1.25

Vdc

Diode Capacitance (VR = 0, f = 1.0 MHz)

CD

−

5.0

pF

Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)

trr

−

50

ns

Аналогичный номер детали - BAS21LT3G

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	BAS21LT3G	52Kb / 6P	High Voltage Switching Diode April, 2005 ??Rev. 7
	BAS21LT3G	128Kb / 6P	High Voltage Switching Diode January, 2007 ??Rev. 9
	BAS21LT3G	110Kb / 6P	High Voltage Switching Diode September, 2012 ??Rev. 14
	BAS21LT3G	110Kb / 6P	High Voltage Switching Diode November, 2012 ??Rev. 15
	BAS21LT3G	75Kb / 6P	High Voltage Switching Diode November, 2016 ??Rev. 18

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Аналогичное описание - BAS21LT3G

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Аналогичный номер детали - BAS21LT3G

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