BC807-25LT1G datasheet(1/10 Pages) ONSEMI

номер детали	BC807-25LT1G

подробное описание детали	General Purpose Transistors

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October, 2010 − Rev. 9

Publication Order Number:

BC807−16LT1/D

1

BC807-16LT1G,

BC807-25LT1G,

BC807-40LT1G

General Purpose

Transistors

PNP Silicon

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

VCEO

−45

V

Collector − Base Voltage

VCBO

−50

V

Emitter − Base Voltage

VEBO

−5.0

V

Collector Current − Continuous

IC

−500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board,

(Note 1) TA = 25°C

Derate above 25°C

PD

225

1.8

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA

556

°C/W

Total Device Dissipation Alumina

Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD

300

2.4

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

SOT−23

CASE 318

STYLE 6

1

2

3

http://onsemi.com

COLLECTOR

3

1

BASE

2

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

1

5xx M G

G

5xx = Device Code

xx = A1, B1, or C

M

= Date Code*

G

=Pb−Free Package

MARKING DIAGRAM

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

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