поискавой системы для электроныых деталей |
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BC848CPDW1T1G датащи(PDF) 6 Page - ON Semiconductor |
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BC848CPDW1T1G датащи(HTML) 6 Page - ON Semiconductor |
6 / 17 page BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G http://onsemi.com 6 TYPICAL PNP CHARACTERISTICS — BC846 Figure 9. DC Current Gain vs. Collector Current Figure 10. Collector Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1 0.1 0.01 0.001 0 100 200 300 400 500 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 Figure 11. Base Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 VCE = 1 V 150°C −55°C 25°C IC/IB = 20 150°C −55°C 25°C 0.4 0.9 IC/IB = 20 150°C −55°C 25°C VCE = 5 V 150°C −55°C 25°C 0.4 0.7 1.1 Figure 13. Collector Saturation Region IB, BASE CURRENT (mA) Figure 14. Base−Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) -1.0 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 -0.2 -2.0 -10 -200 -1.0 TJ = 25°C IC = -10 mA -0.05 -0.2 -0.5 -2.0 -5.0 -100 mA -20 mA -1.4 -1.8 -2.2 -2.6 -3.0 -0.5 -5.0 -20 -50 -100 -55 °C to 125°C qVB for VBE -50 mA -200 mA |
Аналогичный номер детали - BC848CPDW1T1G |
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Аналогичное описание - BC848CPDW1T1G |
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