BC857CDW1T1G datasheet(3/6 Pages) ONSEMI

номер детали	BC857CDW1T1G

подробное описание детали	Dual General Purpose Transistors

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BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series

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TYPICAL CHARACTERISTICS − BC856

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 2. “On” Voltage

IC, COLLECTOR CURRENT (mA)

-0.8

-1.0

-0.6

-0.2

-0.4

1.0

2.0

-0.1

-1.0

-10

-200

-0.2

0.2

0.5

-0.2

-1.0

-10

-200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = -5.0 V

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

-1.0

-1.2

-1.6

-2.0

-0.02

-1.0

-10

0

-20

-0.1

-0.4

-0.8

-0.2

-2.0

-10

-200

-1.0

TJ = 25°C

IC =

-10 mA

VCE = -5.0 V

TA = 25°C

0

-0.5

-2.0

-5.0

-20

-50

-100

-0.05

-0.2

-0.5

-2.0

-5.0

-100 mA

-20 mA

-1.4

-1.8

-2.2

-2.6

-3.0

-0.5

-5.0

-20

-50

-100

-55

°C to 125°C

qVB for VBE

-2.0 -5.0

-20

-50 -100

Figure 5. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

40

Figure 6. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

-0.1 -0.2

-1.0

-50

2.0

-2.0

-10

-100

100

200

500

50

20

10

6.0

4.0

-1.0

-10

-100

VCE = -5.0 V

-0.5

-5.0

-20

TJ = 25°C

Cob

Cib

8.0

-50 mA

-200 mA

Аналогичный номер детали - BC857CDW1T1G

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	BC857CDW1T1G	123Kb / 7P	Dual General Purpose Transistors June, 2013 ??Rev. 9
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