BCW33LT1D datasheet(2/6 Pages) ONSEMI

номер детали	BCW33LT1D

подробное описание детали	General Purpose Transistor

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BCW33LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 2.0 mAdc, IB = 0)

V(BR)CEO

32

−

Vdc

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CBO

32

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector Cutoff Current

(VCB = 32 Vdc, IE = 0)

(VCB = 32 Vdc, IE = 0, TA = 100°C)

ICBO

−

100

10

nAdc

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

hFE

420

800

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)

VCE(sat)

−

0.25

Vdc

Base −Emitter On Voltage

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

VBE(on)

0.55

0.70

Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

4.0

pF

Noise Figure

(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

Figure 1. Turn−On Time

Figure 2. Turn−Off Time

EQUIVALENT SWITCHING TIME TEST CIRCUITS

*Total shunt capacitance of test jig and connectors

10 k

+3.0 V

275

CS < 4.0 pF*

10 k

+3.0 V

275

CS < 4.0 pF*

1N916

300 ns

DUTY CYCLE = 2%

+10.9 V

-0.5 V

<1.0 ns

10 < t1 < 500 ms

DUTY CYCLE = 2%

+10.9 V

0

-9.1 V

< 1.0 ns

t1

Аналогичный номер детали - BCW33LT1D

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	BCW33LT1	371Kb / 8P	General Purpose Transistor
ON Semiconductor	BCW33LT1	261Kb / 8P	General Purpose Transistor(NPN Silicon)? February, 2003 - Rev. 2
Leshan Radio Company	BCW33LT1	265Kb / 6P	General Purpose Transistors(NPN Silicon)
ON Semiconductor	BCW33LT1G	226Kb / 6P	General Purpose Transistor November, 2016 ??Rev. 6
ON Semiconductor	BCW33LT1G	226Kb / 6P	General Purpose Transistor November, 2016 ??Rev. 6

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Аналогичное описание - BCW33LT1D

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