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STX23NM60ND датащи(PDF) 4 Page - STMicroelectronics |
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STX23NM60ND датащи(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STB/I/F/P/W23NM60ND 4/18 Doc ID 14367 Rev 3 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS= 0 600 V dv/dt(1) 1. Characteristic value at turn off on inductive load Drain-source voltage slope VDD = 480 V, ID = 19.5 A, VGS = 10 V 30 V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,@125 °C 1 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 10 A 0.150 0.180 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VDS =15 V, ID= 10 A - 17 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f =1 MHz, VGS = 0 - 2050 80 8 - pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 318 - pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain -4 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 19.5 A VGS = 10 V (see Figure 19) - 70 10 30 - nC nC nC |
Аналогичный номер детали - STX23NM60ND_10 |
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Аналогичное описание - STX23NM60ND_10 |
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