SPI20N65C3 datasheet(1/15 Pages) INFINEON

номер детали	SPI20N65C3

подробное описание детали	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

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производитель	INFINEON [Infineon Technologies AG]

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200

7-08-30

Rev. 3.0

Page 1

SPP20N65C3, SPA20N65C3

SPI20N65C3

Cool MOS™ Power Transistor

V DS

650

V

RDS(on)

0.19

Ω

ID

20.7

A

Feature

• New revolutionary high voltage technology

• Worldwide best RDS(on) in TO 220

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

P

G-TO262

P

G-TO220FP PG-TO220

P-TO220-3-31

1

2

3

Marking

20N65C3

Type

Package

Ordering Code

SPP20N65C3

P

G-TO220

Q67040-S4556

SPA20N65C3

P

G-TO220FP

SP000216362

SPI20N65C3

P

G-TO262

Q67040-S4560

Maximum Ratings

Parameter

Symbol

Value

Unit

SPA

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

20.7

13.1

20.71)

13.11)

A

Pulsed drain current, tp limited by Tjmax

ID puls

62.1

A

Avalanche energy, single pulse

ID=3.5A, VDD=50V

EAS

690

mJ

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=7A, VDD=50V

EAR

1

Avalanche current, repetitive tAR limited by Tjmax

IAR

7

A

Gate source voltage

VGS

±20

V

Gate source voltage AC (f >1Hz)

VGS

±30

Power dissipation, TC = 25°C

Ptot

208

34.5

W

SPP_I

Operating and storage temperature

Tj , Tstg

-55...+150

°C

Аналогичный номер детали - SPI20N65C3

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	SPI20N65C3	784Kb / 14P	Cool MOS??Power Transistor 2003-08-15
Infineon Technologies A...	SPI20N65C3	622Kb / 15P	New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Rev. 3.1 2009-12-01
Inchange Semiconductor ...	SPI20N65C3	331Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичное описание - SPI20N65C3

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SPI20N65C3 датащи(PDF) 1 Page - Infineon Technologies AG

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Аналогичный номер детали - SPI20N65C3

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