SPI07N60C3 datasheet(3/15 Pages) INFINEON

номер детали	SPI07N60C3

подробное описание детали	New revolutionary high voltage technology Ultra low gate charge

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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3 / 15 page

200

7-08-30

Rev.

3.1

Page 3

SPP07N60C3

SPI07N60C3, SPA07N60C3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Characteristics

Transconductance

gfs

VDS≥2*ID*RDS(on)max,

ID=4.6A

-

6

-

S

Input capacitance

Ciss

VGS=0V, VDS=25V,

f

=1MHz

-

790

-

pF

Output capacitance

Coss

-

260

-

Reverse transfer capacitance

Crss

-

16

-

Effective output capacitance,4)

energy related

Co(er)

VGS=0V,

VDS=0V to 480V

-

30

-

Effective output capacitance,5)

time related

Co(tr)

-

55

-

Turn-on delay time

td(on)

VDD=380V, VGS=0/13V,

ID=7.3A, RG=12Ω,

Tj=125°C

-

6

-

ns

Rise time

tr

-

3.5

-

Turn-off delay time

td(off)

-

60

100

Fall time

tf

-

7

15

Gate Charge Characteristics

Gate to source charge

Qgs

VDD=480V, ID=7.3A

-

3

-

nC

Gate to drain charge

Qgd

-

9.2

-

Gate charge total

Qg

VDD=480V, ID=7.3A,

VGS=0 to 10V

-

21

27

Gate plateau voltage

V(plateau) VDD=480V, ID=7.3A

-

5.5

-

V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

5C

o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

6I

SD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.

Identical low-side and high-side switch.

Аналогичный номер детали - SPI07N60C3

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	SPI07N60C3	374Kb / 14P	Cool MOS??Power Transistor Rev. 2.1 2004-04-07
Infineon Technologies A...	SPI07N60C3	625Kb / 15P	New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Rev. 3.2 2009-11-27
Inchange Semiconductor ...	SPI07N60C3	331Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичное описание - SPI07N60C3

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	SPB11N60S5	691Kb / 11P	New revolutionary high voltage technology Ultra low gate charge Rev. 2.3 2005-07-22
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	SPP12N50C3	1Mb / 14P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 3.0 2007-08-30
	SPI11N60CFD	1Mb / 12P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 2.6 2009-04-24
	SPP08N50C3	732Kb / 14P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 2.91 2009-11-27
	SPP16N50C3	1Mb / 14P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 3.0 2007-08-30
	SPP16N50C3	729Kb / 14P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 3.2 2009-12-22
	SPB21N50C3	1Mb / 12P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 2.3 2005-11-07

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Аналогичный номер детали - SPI07N60C3

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