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FP15R12W1T4_B11 датащи(PDF) 8 Page - Infineon Technologies AG |
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FP15R12W1T4_B11 датащи(HTML) 8 Page - Infineon Technologies AG |
8 / 11 page 8 Technische Information / technical information FP15R12W1T4_B11 IGBT-Module IGBT-modules prepared by: DK approved by: MB date of publication: 2009-10-19 revision: 2.0 Vorläufige Daten preliminary data Schaltverluste Diode-Wechselr. (typisch) Schaltverluste Diode-Wechselr. (typisch) Schaltverluste Diode-Wechselr. (typisch) Schaltverluste Diode-Wechselr. (typisch) switching losses diode-inverter (typical) switching losses diode-inverter (typical) switching losses diode-inverter (typical) switching losses diode-inverter (typical) EØþÊ = f (IŒ) EØþÊ = f (IŒ) EØþÊ = f (IŒ) EØþÊ = f (IŒ) R•ÓÒ = 39 Â, V†Š = 600 V R•ÓÒ = 39 Â, V†Š = 600 V R•ÓÒ = 39 Â, V†Š = 600 V R•ÓÒ = 39 Â, V†Š = 600 V IŒ [A] 0 5 10 15 20 25 30 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 EØþÊ, TÝÎ = 125°C EØþÊ, TÝÎ = 150°C Schaltverluste Diode-Wechselr. (typisch) Schaltverluste Diode-Wechselr. (typisch) Schaltverluste Diode-Wechselr. (typisch) Schaltverluste Diode-Wechselr. (typisch) switching losses diode-inverter (typical) switching losses diode-inverter (typical) switching losses diode-inverter (typical) switching losses diode-inverter (typical) EØþÊ = f (R•) EØþÊ = f (R•) EØþÊ = f (R•) EØþÊ = f (R•) IŒ = 15 A, V†Š = 600 V IŒ = 15 A, V†Š = 600 V IŒ = 15 A, V†Š = 600 V IŒ = 15 A, V†Š = 600 V R• [Â] 0 40 80 120 160 200 240 280 320 360 400 0,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1,0 EØþÊ, TÝÎ = 125°C EØþÊ, TÝÎ = 150°C Transienter Wärmewiderstand Diode-Wechselr. Transienter Wärmewiderstand Diode-Wechselr. Transienter Wärmewiderstand Diode-Wechselr. Transienter Wärmewiderstand Diode-Wechselr. transient thermal impedance diode-inverter transient thermal impedance diode-inverter transient thermal impedance diode-inverter transient thermal impedance diode-inverter ZÚÌœ™ = f (t) ZÚÌœ™ = f (t) ZÚÌœ™ = f (t) ZÚÌœ™ = f (t) t [s] 0,001 0,01 0,1 1 10 0,1 1 10 ZÚÌœ™ : Diode i: rÍ[K/W]: Í[s]: 1 0,404 0,0005 2 0,664 0,005 3 1,174 0,05 4 0,808 0,2 τ Durchlasskennlinie der Diode-Gleichrichter (typisch) Durchlasskennlinie der Diode-Gleichrichter (typisch) Durchlasskennlinie der Diode-Gleichrichter (typisch) Durchlasskennlinie der Diode-Gleichrichter (typisch) forward characteristic of diode-rectifier (typical) forward characteristic of diode-rectifier (typical) forward characteristic of diode-rectifier (typical) forward characteristic of diode-rectifier (typical) IŒ = f (VŒ) IŒ = f (VŒ) IŒ = f (VŒ) IŒ = f (VŒ) VŒ [V] 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 0 5 10 15 20 25 30 TÝÎ = 25°C TÝÎ = 150°C |
Аналогичный номер детали - FP15R12W1T4_B11 |
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Аналогичное описание - FP15R12W1T4_B11 |
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