IRF7105QPbF

08/02/10

Description

N-Ch P-Ch

25V

-25V

3.5A

-2.3A

D1

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

P-CHANNEL MOSFET

N-CHANNEL MOSFET

www.irf.com

1

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Advanced Process Technology

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Ultra Low On-Resistance

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Dual N and P Channel MOSFET

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Surface Mount

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Available in Tape & Reel

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150°C Operating Temperature

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Lead-Free

utilize the lastest processing techniques to achieve extremely

low on-resistance per silicon area. Additional features of

these HEXFET Power MOSFET's are a 150°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating. These benefits combine to

make this design an extremely efficient and reliable device

for use in a wide variety of applications.

The efficient SO-8 package provides enhanced thermal

characteristics and dual MOSFET die capability making it

ideal in a variety of power applications. This dual, surface

mount SO-8 can dramatically reduce board space and is

also available

in Tape & Reel.

Max.

N-Channel

P-Channel

3.5

-2.3

2.8-1.8

Pulsed Drain Current 

14

-10

Power Dissipation

2.0

Linear Derating Factor

0.016

W/°C

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery dv/dt ‚

3.0

-3.0

V/nS

Junction and Storage Temperature Range

-55 to + 150

°C

Parameter

Units

A

Absolute Maximum Ratings

W

Parameter

Min.

Typ.

Max.

Units

Maximum Junction-to-Ambient

„

–––

–––

62.5

°C/W

Thermal Resistance Ratings

SO-8

PD - 96102A