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FQP10N50CF датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FQP10N50CF
подробное описание детали  500V N-Channel MOSFET Improved dv/dt capability
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
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FQP10N50CF датащи(HTML) 2 Page - Fairchild Semiconductor

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FQP10N50CF / FQPF10N50CF Rev. A
Package Marking and Ordering Information
Electrical Characteristics T
C = 25°C unless otherwise noted
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 7mH, IAS = 10A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width
≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP10N50CF
FQP10N50CF
TO-220
-
-
50
FQPF10N50CF
FQPF10N50CF
TO-220F
-
-
50
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA, TJ = 25°C
500
--
--
V
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C--
0.5
--
V/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
--
--
10
µA
VDS = 400V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 5A
--
0.5
0.61
gFS
Forward Transconductance
VDS = 40V, ID = 5A
(Note 4)
--
15
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
1610
2096
pF
Coss
Output Capacitance
--
177
230
pF
Crss
Reverse Transfer Capacitance
--
16
24
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 250V, ID = 10A
RG = 25Ω
(Note 4, 5)
--
29
67
ns
tr
Turn-On Rise Time
--
80
170
ns
td(off)
Turn-Off Delay Time
--
141
290
ns
tf
Turn-Off Fall Time
--
80
165
ns
Qg
Total Gate Charge
VDS = 400V, ID = 10A
VGS = 10V
(Note 4, 5)
--
43
56
nC
Qgs
Gate-Source Charge
--
7.5
--
nC
Qgd
Gate-Drain Charge
--
18.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
10
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
40
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 10A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0V, IS = 10A
dIF/dt =100A/µs
(Note 4)
--
50
ns
Qrr
Reverse Recovery Charge
--
0.1
--
µC


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