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N0400P-ZK-E1-AY датащи(PDF) 3 Page - Renesas Technology Corp

номер детали N0400P-ZK-E1-AY
подробное описание детали  MOS FIELD EFFECT TRANSISTOR
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

N0400P-ZK-E1-AY датащи(HTML) 3 Page - Renesas Technology Corp

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
N0400P
SWITCHING
P-CHANNEL POWER MOSFET
DATA SHEET
Document No. D19676EJ1V0DS00 (1st edition)
Date Published February 2009 NS
Printed in Japan
2009
DESCRIPTION
The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
N0400P-ZK-E1-AY
Note
N0400P-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
• 2.5 V drive available
• Super low on-state resistance
RDS(on)1 = 40 m
Ω MAX. (VGS = −4.5 V, ID = −7.5 A)
RDS(on)2 = 73 m
Ω MAX. (VGS = −2.5 V, ID = −7.5 A)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m12
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
m15
A
Drain Current (pulse)
Note1
ID(pulse)
m45
A
Total Power Dissipation (TC = 25
°C)
PT1
25
W
Total Power Dissipation (TA = 25
°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Single Avalanche Current
Note2
IAS
−16
A
Single Avalanche Energy
Note2
EAS
25
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = −20 V, RG = 25 Ω, VGS = −12 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
5.0
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
(TO-252)


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