поискавой системы для электроныых деталей |
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N0400P-ZK-E1-AY датащи(PDF) 3 Page - Renesas Technology Corp |
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N0400P-ZK-E1-AY датащи(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR N0400P SWITCHING P-CHANNEL POWER MOSFET DATA SHEET Document No. D19676EJ1V0DS00 (1st edition) Date Published February 2009 NS Printed in Japan 2009 DESCRIPTION The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE N0400P-ZK-E1-AY Note N0400P-ZK-E2-AY Note Pure Sn (Tin) Tape 2500 p/reel TO-252 (MP-3ZK) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • 2.5 V drive available • Super low on-state resistance RDS(on)1 = 40 m Ω MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 73 m Ω MAX. (VGS = −2.5 V, ID = −7.5 A) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS −40 V Gate to Source Voltage (VDS = 0 V) VGSS m12 V Drain Current (DC) (TC = 25 °C) ID(DC) m15 A Drain Current (pulse) Note1 ID(pulse) m45 A Total Power Dissipation (TC = 25 °C) PT1 25 W Total Power Dissipation (TA = 25 °C) PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS −16 A Single Avalanche Energy Note2 EAS 25 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25 °C, VDD = −20 V, RG = 25 Ω, VGS = −12 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 5.0 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W (TO-252) |
Аналогичный номер детали - N0400P-ZK-E1-AY |
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Аналогичное описание - N0400P-ZK-E1-AY |
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