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ST2S06B датащи(PDF) 6 Page - STMicroelectronics

номер детали ST2S06B
подробное описание детали  Dual synchronous rectification with reset or inhibit, 0.5 A, 1.5 MHz adjustable step-down switching regulator
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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Electrical characteristics
ST2S06A33, ST2S06B
6/18
Doc ID 13866 Rev 4
4
Electrical characteristics
VIN_SW = VIN_A = 5 V, V01 = 3.3 V, VO2 = 1.2 V, C1 = 4.7 µF, C2 = C3 = 22 µF, L1 = L2 = 3.3
µH, TJ = - 30 to 125 °C unless otherwise specified. Typical values are referred to 25 °C.
Table 6.
Electrical characteristics for ST2S06A33
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
OUT1
Output feedback pin
3.23
3.3
3.37
V
FB2
Feedback voltage
784
800
816
mV
IO1
IO1 pin bias current
VO = 3.5 V
15
20
µA
IFB2
VFB pin bias current
VFB = 1 V
600
nA
IQ
Quiescent current
VFB = 1 V
1.2
mA
IO1,2
Output current
VIN = 4 to 5.5 V
(1)
0.8
A
IMIN
Minimum output current
1
mA
%VO1,2/ΔVI
N
Reference line regulation
4V < VIN < 5.5 V
0.032
%VO/
VIN
ΔVO1,2
Reference load regulation
10mA < IO < 0.5 A
5.5
15
mV
PWM fS
PWM switching
frequency(1)
VFB = 0.7 V, TA = 25°C
1.2
1.5
1.8
MHz
DMAX
Maximum duty cycle
VFB = 0.7 V, TA = 25°C
85
94
%
ISWL
Switching current limitation
1
1.2
A
ILKN
NMOS leakage current
VFB = 0.9 V, TA = 25°C
0.1
µA
ILKP
PMOS leakage current
VFB = 0.9 V, TA = 25°C
0.1
µA
RDSon-N
NMOS switch on resistance ISW = 250 mA
0.15
0.3
Ω
RDSon-P
PMOS switch on resistance ISW = 250 mA
0.2
0.4
Ω
η
Efficiency
IO = 20 mA to 100 mA
75
%
IO = 100 mA to 0.5 A
90
%
TSHDN
Thermal shut down (2)
130
150
°C
THYS
Thermal shut down
hysteresis (2)
15
°C
ΔVO1,2/ΔIO Load transient response (2)
100 mA < IO < 500 mA
tR = tF => 100 ns, TA = 25°C
-5
+5
%VO
Reset section
tDEL
Delay time
TA = 25°C
80
85
ms
VRES
Reset in threshold
measured on input pin
VIN_A Rising
4.5
4.6
4.75
V
VIN_A Falling
4.12
4.2
4.28
1.
VO= 90% of nominal value.
2.
Guaranteed by design, but not tested in production.


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