поискавой системы для электроныых деталей |
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2SC2982 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC2982 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SC2982 2004-07-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) • Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1314 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V VCES 30 Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 6 V DC IC 2 Collector current Pulse (Note 1) ICP 4 A DC IB 0.4 Base current Pulse (Note 1) IBP 0.8 A PC 500 Collector power dissipation PC (Note 2) 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: 2SC2982 mounted on a ceramic substrate (250 mm 2 × 0.8 t) Unit: mm JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) |
Аналогичный номер детали - 2SC2982_04 |
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Аналогичное описание - 2SC2982_04 |
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