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2SC2983 датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали 2SC2983
подробное описание детали  Power Amplifier Applications Driver Stage Amplifier Applications
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC2983 датащи(HTML) 2 Page - Toshiba Semiconductor

  2SC2983_05 Datasheet HTML 1Page - Toshiba Semiconductor 2SC2983_05 Datasheet HTML 2Page - Toshiba Semiconductor 2SC2983_05 Datasheet HTML 3Page - Toshiba Semiconductor 2SC2983_05 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SC2983
2005-02-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 160 V, IE = 0
1.0
µA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
1.0
µA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 A, IB = 0
160
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 1 mA, IC = 0
5
V
DC current gain
hFE
(Note)
VCE = 5 V, IC = 100 mA
70
240
Collector emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 50 mA
1.5
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 500 mA
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 100 mA
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
25
pF
Note: hFE classification O: 70 to 140, Y: 120 to 240
Marking
C2983
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)


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