поискавой системы для электроныых деталей |
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2SC3074 датащи(PDF) 2 Page - Toshiba Semiconductor |
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2SC3074 датащи(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SC3074 2005-02-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 1 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V hFE (1) (Note) VCE = 1 V, IC = 1 A 70 ― 240 DC current gain hFE (2) VCE = 1 V, IC = 3 A 30 ― ― Collector-emitter saturation voltage VCE (sat) IC = 3 A, IB = 0.15 A ― 0.2 0.4 V Base-emitter saturation voltage VBE (sat) IC = 3 A, IB = 0.15 A ― 0.9 1.2 V Transition frequency fT VCE = 4 V, IC = 1 A ― 120 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 80 ― pF Turn-on time ton ― 0.1 ― Storage time tstg ― 1.0 ― Switching time Fall time tf IB1 = −IB2 = 0.15 A, Duty cycle ≤ 1% ― 0.1 ― µs Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking C3074 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) 20 µs INPUT IB1 IB2 OUTPUT VCC = 30 V IB2 |
Аналогичный номер детали - 2SC3074_05 |
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Аналогичное описание - 2SC3074_05 |
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