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2SC3113 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC3113 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SC3113 2003-03-25 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications · High DC current gain: hFE = 600~3600 · High breakdown voltage: VCEO = 50 V · High collector current: IC = 150 mA (max) · Small package Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA Collector power dissipation PC 200 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA DC current gain hFE (Note) VCE = 6 V, IC = 2 mA 600 ¾ 3600 Collector-emitter saturation voltage VCE (sat) IC = 100 mA, IB = 10 mA ¾ 0.12 0.25 V Transition frequency fT VCE = 10 V, IC = 10 mA 100 250 ¾ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 3.5 ¾ pF NF (1) VCE = 6 V, IC = 0.1 mA, f = 100 Hz, RG = 10 kW ¾ 0.5 ¾ Noise figure NF (2) VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 kW ¾ 0.3 ¾ dB Note: hFE classification A: 600~1800, B: 1200~3600 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.) |
Аналогичный номер детали - 2SC3113 |
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Аналогичное описание - 2SC3113 |
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