поискавой системы для электроныых деталей |
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2SC3138 датащи(PDF) 2 Page - Toshiba Semiconductor |
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2SC3138 датащи(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SC3138 2003-03-27 2 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 200 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA Collector-base breakdown voltage V (BR) CBO IC = 0.1 mA, IE = 0 200 ¾ ¾ V Collector-emitter breakdown voltage V (BR) CEO IC = 1 mA, IB = 0 200 ¾ ¾ V DC current gain hFE (Note) VCE = 3 V, IC = 10 mA 70 ¾ 240 Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA ¾ 0.1 0.5 V Base-emitter saturation voltage VBE (sat) IC = 10 mA, IB = 1 mA ¾ 0.75 1.5 V Transition frequency fT VCE = 10 V, IC = 2 mA 50 100 ¾ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 2 4 pF Turn-on time ton ¾ 0.3 ¾ Storage time tstg ¾ 2 ¾ Switching time Fall time tf VCC = 50 V, IC = 6 mA, IB1 = -IB2 = 0.6 mA, pulse width = 5 ms, duty cycle <= 2% ¾ 0.4 ¾ ms Note: hFE classification O: 70~140, Y: 120~240 |
Аналогичный номер детали - 2SC3138_03 |
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Аналогичное описание - 2SC3138_03 |
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