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2SC3267 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC3267 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SC3267 2003-03-25 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Power Switching Applications · Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A · Complementary to 2SA1297 Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Base current IB 0.5 A Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 20 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ¾ ¾ 0.1 mA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 20 ¾ ¾ V Emitter-base breakdown voltage V (BR) EBO IE = 0.1 mA, IC = 0 6 ¾ ¾ V hFE (1) (Note) VCE = 2 V, IC = 100 mA 120 ¾ 700 DC current gain hFE (2) VCE = 2 V, IC = 2 A 75 ¾ ¾ Collector-emitter saturation voltage VCE (sat) IC = 2 A, IB = 0.1 A ¾ ¾ 0.5 V Base-emitter voltage VBE VCE = 2 V, IC = 0.1 A ¾ ¾ 0.85 V Transition frequency fT VCE = 2 V, IC = 0.5 A ¾ 120 ¾ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 30 ¾ pF Note: hFE (1) classification Y: 120~240, GR: 200~400, BL: 350~700 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.) |
Аналогичный номер детали - 2SC3267 |
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Аналогичное описание - 2SC3267 |
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