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2SC3295 датащи(PDF) 1 Page - Toshiba Semiconductor

номер детали 2SC3295
подробное описание детали  Audio Frequency Amplifier Applications Switching Applications
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3295 датащи(HTML) 1 Page - Toshiba Semiconductor

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2SC3295
2003-03-25
1
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC3295
Audio Frequency Amplifier Applications
Switching Applications
· High hFE: hFE = 600~3600
· High voltage: VCEO = 50 V
· High collector current: IC = 150 mA (max)
· Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
¾
¾
0.1
mA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
¾
¾
0.1
mA
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
600
¾
3600
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
¾
0.12
0.25
V
Transition frequency
fT
VCE = 10 V, IC = 10 mA
100
250
¾
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
¾
3.5
¾
pF
NF (1)
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,
Rg = 10 kW
¾
0.5
¾
Noise figure
NF (2)
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
Rg = 10 kW
¾
0.3
¾
dB
Note: hFE classification A: 600~1800, B: 1200~3600
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)


Аналогичный номер детали - 2SC3295_03

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Аналогичное описание - 2SC3295_03

производительномер деталидатащиподробное описание детали
logo
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