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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC3673 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC3673 датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC3673 2004-07-26 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications • High DC current gain: hFE = 500 (min) (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current IB 0.5 A Collector power dissipation PC 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ― ― 10 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 40 ― ― V DC current gain hFE VCE = 1 V, IC = 400 mA 500 ― ― Collector-emitter saturation voltage VCE (sat) IC = 300 mA, IB = 1 mA ― 0.3 0.5 V Base-emitter saturation voltage VBE (sat) IC = 300 mA, IB = 1 mA ― ― 1.1 V Transition frequency fT VCE = 2 V, IC = 100 mA ― 220 ― MHz Collector output capacitance Cob VCB = 10 V, IB = 0, f = 1 MHz ― 20 ― pF Turn-on time ton ― 1.0 ― Storage time tstg ― 3.0 ― Switching time Fall time tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% ― 1.2 ― µs Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight: 0.2 g (typ.) 20 µs VCC = 30 V Output IB2 IB1 Input |
Аналогичный номер детали - 2SC3673 |
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Аналогичное описание - 2SC3673 |
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