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BC857AT-7-F датащи(PDF) 1 Page - Diodes Incorporated |
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BC857AT-7-F датащи(HTML) 1 Page - Diodes Incorporated |
1 / 3 page BC857AT, BT, CT PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Die Construction • Complementary NPN Types Available (BC847AT,BT,CT) • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • "Green" Device (Note 4 and 5) Mechanical Data • Case: SOT-523 • Case Material - Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Terminal Connections: See Diagram • Marking Code: See Table Below & Diagram on Page 2 • Ordering & Date Code Information: See Page 2 • Weight: 0.002 grams (approximate) DS30275 Rev. 9 - 2 1 of 3 www.diodes.com BC857AT, BT, CT © Diodes Incorporated Type Marking BC857AT 3V BC857BT 3W BC857CT 3G SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ⎯ ⎯ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 α 0 ° 8 ° ⎯ All Dimensi mm ons in A M J L D B C H K Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Power Dissipation (Note 1) Pd 150 mW Thermal Resistance, Junction to Ambient (Note 1) RθJA 833 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 3) V(BR)CBO -50 — — V IC = 10μA, IB = 0 Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO -45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO -5 — — V IE = 1μA, IC = 0 DC Current Gain (Note 3) Current Gain A B C hFE 125 220 420 — 290 520 250 475 800 — VCE = -5.0V, IC = -2.0mA Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — — — -300 -650 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — — -700 -900 — — mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Voltage (Note 3) VBE(ON) -600 — — — -750 -820 mV VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA Collector-Cutoff Current (Note 3) ICBO — — — — -15 -4.0 NA µA VCB = -30V VCB = -30V, TA = 150°C Gain Bandwidth Product fT 100 — — MHz VCE = -5.0V, IC = -10mA, f = 100MHz Output Capacitance COB — — 4.5 pF VCB = -10V, f = 1.0MHz Noise Figure NF — — 10 dB IC = -0.2mA, VCE = -5.0Vdc, RS = 2.0KΩ, f = 1.0KHz, BW = 200Hz Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead 3. Short duration pulse test used to minimize self-heating effect. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. G TOP VIEW C E B N |
Аналогичный номер детали - BC857AT-7-F |
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Аналогичное описание - BC857AT-7-F |
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