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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BC847BLP4 датащи(PDF) 1 Page - Diodes Incorporated |
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BC847BLP4 датащи(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  BC847BLP4 Document number: DS31297 Rev. 5 - 2 1 of 4 www.diodes.com July 2009 © Diodes Incorporated BC847BLP4 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Die Construction • Ultra-Small Leadless Surface Mount Package • Ultra Low Profile (0.4mm max) • Complementary PNP Type Available (BC857BLP4) • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: DFN1006H4-3 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections Indicator: Collector Dot • Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Ordering Information: See Page 3 • Marking Information: See Page 3 • Weight: 0.0008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 100 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) @TA = 25°C PD 250 mW Thermal Resistance, Junction to Ambient (Note 3) @TA = 25°C RθJA 500 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic (Note 4) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 50 — — V IC = 10μA, IB = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6 — — V IE = 1μA, IC = 0 DC Current Gain hFE 200 350 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage VCE(SAT) — 80 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) — — 700 900 — — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage VBE(ON) 580 — 640 725 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA Collector-Cutoff Current ICBO — — — — 15 5.0 nA µA VCB = 30V VCB = 30V, TA = 150°C Gain Bandwidth Product fT 100 — — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Collector-Base Capacitance CCBO — 3.0 — pF VCB = 10V, f = 1.0MHz Notes: 1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php 3. Device mounted on FR-4 PCB, pad layout as shown on page 3, or Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Short duration pulse test used to minimize self-heating effect. Bottom View Top View Internal Schematic C E B 2 3 1 Please click here to visit our online spice models database. |
Аналогичный номер детали - BC847BLP4 |
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Аналогичное описание - BC847BLP4 |
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