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DMG3414U датащи(PDF) 1 Page - Diodes Incorporated |
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DMG3414U датащи(HTML) 1 Page - Diodes Incorporated |
1 / 6 page DMG3414U Document number: DS31739 Rev. 3 - 2 1 of 6 www.diodes.com May 2009 © Diodes Incorporated DMG3414U N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 25m Ω @ VGS = 4.5V • 29m Ω @ VGS = 2.5V • 37m Ω @ VGS = 1.8V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Terminals Connections: See Diagram Below • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 70°C ID 4.2 3.2 A Pulsed Drain Current (Note 4) IDM 30 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 0.78 W Thermal Resistance, Junction to Ambient @TA = 25°C RθJA 162 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s. 4. Repetitive rating, pulse width limited by junction temperature. TOP VIEW Internal Schematic TOP VIEW D G S Source Gate Drain Please click here to visit our online spice models database. |
Аналогичный номер детали - DMG3414U |
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Аналогичное описание - DMG3414U |
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