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DMG6898LSD датащи(PDF) 1 Page - Diodes Incorporated |
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DMG6898LSD датащи(HTML) 1 Page - Diodes Incorporated |
1 / 6 page DMG6898LSD Document number: DS31947 Rev. 3 - 2 1 of 6 www.diodes.com June 2010 © Diodes Incorporated DMG6898LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2KV • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram Below • Marking Information: See Page 5 • Ordering Information: See Page 5 • Weight: 0.072 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 85°C ID 9.5 7.1 A Pulsed Drain Current (Note 4) IDM 30 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 1.28 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) RθJA 99.3 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. TOP VIEW Internal Schematic TOP VIEW D1 G2 G1 D2 S1 S2 D1 D2 ESD PROTECTED TO 2kV |
Аналогичный номер детали - DMG6898LSD |
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Аналогичное описание - DMG6898LSD |
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